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High-resolution optical detection of electron spin resonance in epitaxial semiconductor layers by coherent Raman spectroscopy


Reference:

Bingham, S. J., Davies, J. J. and Wolverson, D., 2002. High-resolution optical detection of electron spin resonance in epitaxial semiconductor layers by coherent Raman spectroscopy. Physical Review B, 65 (15), 155301.

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Official URL:

http://link.aps.org/doi/10.1103/PhysRevB.65.155301

Abstract

We describe the application to semiconductors of a microwave-frequency optical heterodyne technique that enables electron-spin-resonance spectra to be detected through coherent Raman scattering. The technique is sufficiently sensitive to detect spectra from epitaxial layers and has the added advantage of optical selectivity. We demonstrate its effectiveness with studies of a ZnSe epitaxial layer in which there is a variation in strain. The spin-resonance linewidths are sufficiently narrow for the gyromagnetic ratio to be determined with a precision of 1 part in 104 and, as the laser is tuned to resonance with differently strained parts of the material, the g value changes at a rate of approximately 0.4 eV–1. We have carried out the experiment in both transmission and reflection geometries and the technique promises to be of wide applicability.

Details

Item Type Articles
CreatorsBingham, S. J., Davies, J. J. and Wolverson, D.
DOI10.1103/PhysRevB.65.155301
Uncontrolled Keywordsraman spectra, epr line breadth, semiconductor epitaxial layers, microwave-optical double resonance, gyromagnetic ratio, ii-vi semiconductors, zinc compounds
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9180
Additional InformationID number: ISI:000175147100074

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