Research

Binding energy of charged excitons in ZnSe-based quantum wells


Reference:

Astakhov, G. V., Yakovlev, D. R., Kochereshko, V. P., Ossau, W., Faschinger, W., Puls, J., Henneberger, F., Crooker, S. A., McCulloch, Q., Wolverson, D., Gippius, N. A. and Waag, A., 2002. Binding energy of charged excitons in ZnSe-based quantum wells. Physical Review B, 65 (16), 165335.

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Official URL:

http://link.aps.org/doi/10.1103/PhysRevB.65.165335

Details

Item Type Articles
CreatorsAstakhov, G. V., Yakovlev, D. R., Kochereshko, V. P., Ossau, W., Faschinger, W., Puls, J., Henneberger, F., Crooker, S. A., McCulloch, Q., Wolverson, D., Gippius, N. A. and Waag, A.
DOI10.1103/PhysRevB.65.165335
Uncontrolled Keywordsoscillator strengths, semiconductor quantum wells, excitons, magnetoreflectance, zeeman effect, carrier density, ii-vi semiconductors, zinc compounds
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9185
Additional InformationID number: ISI:000175325000099

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