The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC
Reference:
Anwand, W., Brauer, G., Wirth, H., Skorupa, W. and Coleman, P. G., 2002. The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC. Applied Surface Science, 194 (1-4), pp. 127-130.
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Details
| Item Type | Articles |
| Creators | Anwand, W., Brauer, G., Wirth, H., Skorupa, W. and Coleman, P. G. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 9187 |
| Additional Information | ID number: ISI:000177499200026 |
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