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The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC


Reference:

Anwand, W., Brauer, G., Wirth, H., Skorupa, W. and Coleman, P. G., 2002. The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC. Applied Surface Science, 194 (1-4), pp. 127-130.

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Details

Item Type Articles
CreatorsAnwand, W., Brauer, G., Wirth, H., Skorupa, W. and Coleman, P. G.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9187
Additional InformationID number: ISI:000177499200026

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