Research

Resonant tunneling in partially disordered silicon nanostructures


Reference:

Tsybeskov, L., Grom, G. F., Krishnan, R., Montes, L., Fauchet, P. M., Kovalev, D., Diener, J., Timoshenko, V., Koch, F., McCaffrey, J. P., Baribeau, J. M., Sproule, G. I., Lockwood, D. J., Niquet, Y. M., Delerue, C. and Allan, G., 2001. Resonant tunneling in partially disordered silicon nanostructures. EPL (Europhysics Letters), 55 (4), pp. 552-558.

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Abstract

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

Details

Item Type Articles
CreatorsTsybeskov, L., Grom, G. F., Krishnan, R., Montes, L., Fauchet, P. M., Kovalev, D., Diener, J., Timoshenko, V., Koch, F., McCaffrey, J. P., Baribeau, J. M., Sproule, G. I., Lockwood, D. J., Niquet, Y. M., Delerue, C. and Allan, G.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9201
Additional InformationID number: ISI:000170394900016

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