Resonant tunneling in partially disordered silicon nanostructures

Reference:

Tsybeskov, L., Grom, G. F., Krishnan, R., Montes, L., Fauchet, P. M., Kovalev, D., Diener, J., Timoshenko, V., Koch, F., McCaffrey, J. P., Baribeau, J. M., Sproule, G. I., Lockwood, D. J., Niquet, Y. M., Delerue, C. and Allan, G., 2001. Resonant tunneling in partially disordered silicon nanostructures. EPL (Europhysics Letters), 55 (4), pp. 552-558.

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Abstract

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

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