Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures
Reference:
Knights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C. and Coleman, P. G., 2001. Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures. Journal of Applied Physics, 89 (1), pp. 76-79.
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Details
| Item Type | Articles |
| Creators | Knights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C. and Coleman, P. G. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 9236 |
| Additional Information | ID number: ISI:000166118900014 |
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