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Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures


Reference:

Knights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C. and Coleman, P. G., 2001. Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures. Journal of Applied Physics, 89 (1), pp. 76-79.

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Details

Item Type Articles
CreatorsKnights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C. and Coleman, P. G.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9236
Additional InformationID number: ISI:000166118900014

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