Morphology of porous silicon layers deduced from polarization memory experiments
Diener, J., Kovalev, D., Polisski, G., Kunzner, N. and Koch, F., 2001. Morphology of porous silicon layers deduced from polarization memory experiments. Physica Status Solidi B-Basic Solid State Physics, 224 (1), pp. 297-300.
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The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the  growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.
|Creators||Diener, J., Kovalev, D., Polisski, G., Kunzner, N. and Koch, F.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000167827200059|
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