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Morphology of porous silicon layers deduced from polarization memory experiments


Reference:

Diener, J., Kovalev, D., Polisski, G., Kunzner, N. and Koch, F., 2001. Morphology of porous silicon layers deduced from polarization memory experiments. Physica Status Solidi B-Basic Solid State Physics, 224 (1), pp. 297-300.

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Abstract

The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.

Details

Item Type Articles
CreatorsDiener, J., Kovalev, D., Polisski, G., Kunzner, N. and Koch, F.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9270
Additional InformationID number: ISI:000167827200059

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