Luminescence properties of two-photon excited silicon nanocrystals
Diener, J., Kovalev, D., Polisski, G. and Koch, F., 2001. Luminescence properties of two-photon excited silicon nanocrystals. Optical Materials, 17 Jun-Jul (1-2), pp. 117-120.
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Visible photoluminescence (PL) from silicon nanocrystals (NCs) in porous silicon (PSi) at two-photon excitation (two-photon absorption) has been studied. For resonant excitation at low temperatures the PL response near to the excitation energy differs significantly from that observed at one-photon excitation. Contrary to one-photon excitation no spectral gap between the excitation energy and the onset of the two-photos excited PL is observed. This is explained in the framework of selection rules for dipole allowed and forbidden optical transitions in silicon NCs. At room temperature one- and two-photon excitation results in a similar PL spectra. However; the degree of linear polarization (p) is significantly larger for the later one. This enhancement of p is a consequence of the dielectric nanostructure of PSi and the excitation of ellipsoidal NCs with linearly polarized light by a higher-order, nonlinear, process. (C) 2001 Elsevier Science B.V. All rights reserved.
|Creators||Diener, J., Kovalev, D., Polisski, G. and Koch, F.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000169788700027|
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