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Resonant excitation of interfacial Si-O: possibility of nonthermal processing


Reference:

Diener, J., Kovalev, D. and Koch, F., 2001. Resonant excitation of interfacial Si-O: possibility of nonthermal processing. Microelectronic Engineering, 59 (1-4), pp. 291-294.

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Abstract

Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.

Details

Item Type Articles
CreatorsDiener, J., Kovalev, D. and Koch, F.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9272
Additional InformationID number: ISI:000172218100041

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