Resonant excitation of interfacial Si-O: possibility of nonthermal processing
Diener, J., Kovalev, D. and Koch, F., 2001. Resonant excitation of interfacial Si-O: possibility of nonthermal processing. Microelectronic Engineering, 59 (1-4), pp. 291-294.
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Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.
|Creators||Diener, J., Kovalev, D. and Koch, F.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000172218100041|
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