Resonant excitation of interfacial Si-O: possibility of nonthermal processing
Reference:
Diener, J., Kovalev, D. and Koch, F., 2001. Resonant excitation of interfacial Si-O: possibility of nonthermal processing. Microelectronic Engineering, 59 (1-4), pp. 291-294.
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Abstract
Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.
Details
| Item Type | Articles |
| Creators | Diener, J., Kovalev, D. and Koch, F. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 9272 |
| Additional Information | ID number: ISI:000172218100041 |
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