Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals
Diener, J., Kovalev, D., Heckler, H., Polisski, G., Kunzner, N., Koch, F., Efros, A. L. and Rosen, M., 2001. Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals. Optical Materials, 17 Jun-Jul (1-2), pp. 135-139.
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We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.
|Creators||Diener, J., Kovalev, D., Heckler, H., Polisski, G., Kunzner, N., Koch, F., Efros, A. L. and Rosen, M.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000169788700031|
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