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Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals


Reference:

Diener, J., Kovalev, D., Heckler, H., Polisski, G., Kunzner, N., Koch, F., Efros, A. L. and Rosen, M., 2001. Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals. Optical Materials, 17 Jun-Jul (1-2), pp. 135-139.

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Abstract

We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.

Details

Item Type Articles
CreatorsDiener, J., Kovalev, D., Heckler, H., Polisski, G., Kunzner, N., Koch, F., Efros, A. L. and Rosen, M.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9273
Additional InformationID number: ISI:000169788700031

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