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Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe


Reference:

Davies, J. J., Wolverson, D., Strauf, S., Michler, P., Gutowski, J., Klude, M., Ohkawa, K., Hommel, D., Tournie, E. and Faurie, J. P., 2001. Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe. Physical Review B, 6420 (20), 205206.

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Official URL:

http://link.aps.org/doi/10.1103/PhysRevB.64.205206

Abstract

Spin-flip Raman scattering has been used to provide direct experimental evidence that shallow phosphorus acceptors in relaxed ZnSe epitaxial layers grown on GaAs lie at sites of predominantly trigonal local symmetry. As a consequence, the energy of the heavy-hole bound exciton is about 0.45 meV less than that of the light exciton. This splitting is significantly smaller than (and of opposite sign and different symmetry to) the valence-band splitting of 3 meV observed due to the macroscopic biaxial tensile strain in the same specimens. The behavior is in complete contrast to that of nitrogen acceptors, for which no trigonal field is observed. The experiments provide confirmation of the behavior predicted by previous pseudopotential total-energy calculations for the shallow acceptor states formed by these two different group-V dopants when substituting at selenium sites.

Details

Item Type Articles
CreatorsDavies, J. J., Wolverson, D., Strauf, S., Michler, P., Gutowski, J., Klude, M., Ohkawa, K., Hommel, D., Tournie, E. and Faurie, J. P.
DOI10.1103/PhysRevB.64.205206
Uncontrolled Keywordsraman spectra, jahn-teller effect, impurity states, excitons, semiconductor epitaxial layers, phosphorus, photoluminescence, ii-vi semiconductors, zinc compounds
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9275
Additional InformationID number: ISI:000172464600051

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