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Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor


Reference:

Ortolland, S., Wright, N., Johnson, C., Knights, A., Coleman, P., Burrows, C. and Pidduck, A., 2000. Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor. In: Silicon Carbine and Related Materials, ECSCRM2000, 2000-01-01.

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Details

Item Type Conference or Workshop Items (Paper)
CreatorsOrtolland, S., Wright, N., Johnson, C., Knights, A., Coleman, P., Burrows, C. and Pidduck, A.
DepartmentsFaculty of Science > Physics
RefereedNo
StatusPublished
ID Code9297

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