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Items by Edwards, Michael

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Jump to: 2013 | 2012 | 2010
Number of items: 7.

2013

Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R. and Allsopp, D.W.E., 2013. Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor. Sensors and Actuators A-Physical, 194, pp. 247-251.

2012

Edwards, M. J., Le Boulbar, E. D., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C. R. and Allsopp, D. W. E., 2012. Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 960-963.

Timothy Peter, M., Jonathan James, W., Joseph Michael, D., Richard Stuart, B., Edwards, M., Bowen, C., Allsopp, D. and Liu, C., 2012. Diamond composite substrate for semiconductor devices. H01L21/02- GB2481687 (A), 04 January 2012.

Hicks, M.-l., Tabeart, J., Edwards, M. J., Le Boulbar, E. D., Allsopp, D. W. E., Bowen, C. R. and Dent, A. C. E., 2012. High temperature measurement of elastic moduli of (0001) gallium nitride. Integrated Ferroelectrics, 133 (1), pp. 17-24.

2010

Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R. and Allsopp, D. W. E., 2010. Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In: Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ: IEEE Computer Society, pp. 127-130.

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