Items by Edwards, Michael
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Number of items: 7.
Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R. and Allsopp, D.W.E., 2013. Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor. Sensors and Actuators A-Physical, 194, pp. 247-251.
Edwards, M. J., Le Boulbar, E. D., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C. R. and Allsopp, D. W. E., 2012. Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 960-963.
Timothy Peter, M., Jonathan James, W., Joseph Michael, D., Richard Stuart, B., Edwards, M., Bowen, C., Allsopp, D. and Liu, C., 2012. Diamond composite substrate for semiconductor devices. H01L21/02- GB2481687 (A), 04 January 2012.
Hicks, M.-l., Tabeart, J., Edwards, M. J., Le Boulbar, E. D., Allsopp, D. W. E., Bowen, C. R. and Dent, A. C. E., 2012. High temperature measurement of elastic moduli of (0001) gallium nitride. Integrated Ferroelectrics, 133 (1), pp. 17-24.
Edwards, M., 2012. Modelling, fabrication and development of GaN-based sensors and substrates for high strain environments. Thesis (Doctor of Philosophy (PhD)). University of Bath.
Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R. and Allsopp, D. W. E., 2010. Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. Piscataway, NJ: IEEE Computer Society, pp. 127-130.
Edwards, M. J., Bowen, C. R., Allsopp, D. W. E. and Dent, A. C. E., 2010. Modelling wafer bow in silicon-polycrystalline CVD diamond substrates for GaN-based devices. Journal of Physics D: Applied Physics, 43 (38), 385502.