Items by Edwards, Michael
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Number of items: 5.
Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R. and Allsopp, D.W.E., 2013. Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor. Sensors and Actuators A-Physical, 194, pp. 247-251.
Edwards, M. J., Le Boulbar, E. D., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C. R. and Allsopp, D. W. E., 2012. Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 960-963.
Hicks, M.-l., Tabeart, J., Edwards, M. J., Le Boulbar, E. D., Allsopp, D. W. E., Bowen, C. R. and Dent, A. C. E., 2012. High temperature measurement of elastic moduli of (0001) gallium nitride. Integrated Ferroelectrics, 133 (1), pp. 17-24.
Edwards, M. J., Bowen, C. R., Allsopp, D. W. E. and Dent, A. C. E., 2010. Modelling wafer bow in silicon-polycrystalline CVD diamond substrates for GaN-based devices. Journal of Physics D: Applied Physics, 43 (38), 385502.
Edwards, M., 2012. Modelling, fabrication and development of GaN-based sensors and substrates for high strain environments. Thesis (Doctor of Philosophy (PhD)). University of Bath.