Research

Items by Hopkins, Margaret

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Number of items: 5.

2015

Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E. and Martin, R. W., 2015. Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11), 115705.

2014

Cavanagh, K., Liu, C., Martin, T., Hopkins, M. A., Sivaraya, S. and Allsopp, D. W. E., 2014. Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE. In: Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014. IEEE, pp. 1-4.

Massabuau, F.C.-P., Davies, M.J., Oehler, F., Pamenter, S.K., Thrush, E.J., Kappers, M.J., Kovács, A., Williams, T., Hopkins, M.A., Humphreys, C.J., Dawson, P., Dunin-Borkowski, R.E., Etheridge, J., Allsopp, D.W.E. and Oliver, R.A., 2014. The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem. Applied Physics Letters, 105, 112110.

2013

Oliver, R. A., Massabuau, F. C. P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E. and Humphreys, C. J., 2013. The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters, 103 (14), 141114.

2010

Gong, Y., Tapajna, M., Bakalova, S., Zhang, Y., Edgar, J. H., Dudley, M., Hopkins, M. and Kuball, M., 2010. Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device. Applied Physics Letters, 96 (22), 223506.

This list was generated on Wed May 27 03:09:42 2015 IST.