Research

Items by Hopkins, Margaret

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Number of items: 5.

Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E. and Martin, R. W., 2015. Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11), 115705.

Massabuau, F.C.-P., Davies, M.J., Oehler, F., Pamenter, S.K., Thrush, E.J., Kappers, M.J., Kovács, A., Williams, T., Hopkins, M.A., Humphreys, C.J., Dawson, P., Dunin-Borkowski, R.E., Etheridge, J., Allsopp, D.W.E. and Oliver, R.A., 2014. The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem. Applied Physics Letters, 105, 112110.

Cavanagh, K., Liu, C., Martin, T., Hopkins, M. A., Sivaraya, S. and Allsopp, D. W. E., 2014. Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE. In: 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014, 2014-10-20 - 2014-10-22. IEEE, pp. 1-4.

Oliver, R. A., Massabuau, F. C. P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E. and Humphreys, C. J., 2013. The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters, 103 (14), 141114.

Gong, Y., Tapajna, M., Bakalova, S., Zhang, Y., Edgar, J. H., Dudley, M., Hopkins, M. and Kuball, M., 2010. Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device. Applied Physics Letters, 96 (22), 223506.

This list was generated on Wed May 4 22:11:27 2016 IST.