Items by Takashina, Dr Kei
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Articles
Grounds, A., Still, R. and Takashina, K., 2012. Enhanced droplet control by transition boiling. Scientific Reports, 2, 720.
Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y., 2011. Impact of valley polarization on the resistivity in two dimensions. Physical Review Letters, 106 (19), 196403.
Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K., 2010. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. Semiconductor Science and Technology, 25 (12), 125001.
Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K., 2009. Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures. Applied Physics Letters, 94 (14), 142104.
Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands. International Journal of Modern Physics B, 23 (12 & 13), pp. 2938-2942.
Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. Applied Physics Letters, 94 (14), 142101.
Liu, H. W., Fujisawa, T., Ono, Y., Inokawa, H., Fujiwara, A., Takashina, K. and Hirayama, Y., 2008. Pauli-spin-blockade transport through a silicon double quantum dot. Physical Review B, 77 (7), 073310.
Ono, Y., Khalafalla, M., Nishiguchin, K., Takashina, K., Fujiwara, A., Horiguchi, S., Inokawa, H. and Takahashi, Y., 2008. Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics. Applied Surface Science, 254 (19), pp. 6252-6256.
Shields, P.A., Nicholas, R.J., Takashina, K., Grandjean, N. and Massies, J., 2002. Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction. Physical Review B, 65 (19), pp. 1953201-1953205.
