Research

Items by Jiang, Quanzhong

Up a level
Export as [feed] RSS 1.0 [feed] Atom [feed] RSS 2.0
Group by: Item Type | Date | No Grouping
Jump to: 2013 | 2012
Number of items: 4.

2013

Jiang, Q., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates. Semiconductor Science and Technology, 28 (9), 094010.

Jiang, Q., Lewins, C. J., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction. Japanese Journal of Applied Physics, 52 (8 PART2), 08JB24.

Jiang, Q., Lewins, C.J., Allsopp, D.W.E., Bowen, C.R., Wang, W.N., Satka, A., Priesol, J. and Uherek, F., 2013. Enhanced photoluminescence from InGaN/GaN quantum wells on a GaN/Si(111) template with extended three-dimensional GaN growth on low-temperature AIN interlayer. Japanese Journal of Applied Physics, 52 (6), 061002.

2012

Jiang, Q., Edwards, M. J., Shields, P. A., Allsopp, D. W. E., Bowen, C. R., Wang, W. N., Tóth, L., Pécz, B., Srnanek, R., Satka, A. and Kovac, J., 2012. Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 650-653.

This list was generated on Mon Nov 24 19:18:13 2014 GMT.