Research

Items by Jiang, Quanzhong

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Number of items: 4.

Jiang, Q., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates. Semiconductor Science and Technology, 28 (9), 094010.

Jiang, Q., Lewins, C. J., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction. Japanese Journal of Applied Physics, 52 (8 PART2), 08JB24.

Jiang, Q., Lewins, C.J., Allsopp, D.W.E., Bowen, C.R., Wang, W.N., Satka, A., Priesol, J. and Uherek, F., 2013. Enhanced photoluminescence from InGaN/GaN quantum wells on a GaN/Si(111) template with extended three-dimensional GaN growth on low-temperature AIN interlayer. Japanese Journal of Applied Physics, 52 (6), 061002.

Jiang, Q., Edwards, M. J., Shields, P. A., Allsopp, D. W. E., Bowen, C. R., Wang, W. N., Tóth, L., Pécz, B., Srnanek, R., Satka, A. and Kovac, J., 2012. Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 650-653.

This list was generated on Fri Oct 24 07:59:14 2014 IST.