Items by Le Boulbar, Emmanuel

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Number of items: 16.


Le Boulbar, E. D., Priesol, J., Nouf-Allehiani, M., Naresh-Kumar, G., Fox, S., Trager-Cowan, C., Šatka, A., Allsopp, D. W. E. and Shields, P. A., 2017. Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes. Journal of Crystal Growth, 466, pp. 30-38.

Xie, M., Dunn, S., Le Boulbar, E. and Bowen, C. R., 2017. Pyroelectric energy harvesting for water splitting. International Journal of Hydrogen Energy Item availability may be restricted.

Coulon, P.-M., Hosseini-Vajargah, S., Bao, A., Edwards, P. R., Le Boulbar, E., Girgel, I., Martin, R. W., Humphreys, C., Oliver, R., Allsopp, D. and Shields, P. A., 2017. Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure. Crystal Growth and Design, 17 (2), pp. 474-482. Item availability may be restricted.

Le Boulbar, E., Hosseini-Vajargah, S., Edwards, P. R., Coulon, P.-M., Girgel, I., Griffiths, I., Cherns, D., Martin, R. W., Humphreys, C., Bowen, C., Allsopp, D. and Shields, P., 2016. Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods. Crystal Growth and Design, 16 (4), pp. 1907-1916.

Girgel, I., Edwards, P. R., Le Boulbar, E., Coulon, P.-M., Sahonta, S.-L., Allsopp, D., Martin, R. W., Humphreys, C. and Shields, P., 2016. Investigation of InGaN facet-dependent non-polar growth rates and composition for core-shell LEDs. Journal of Nanophotonics, 10 (1), 016010.

Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., Oliver, R. A., Humphreys, C. J., Shields, P., Le Boulbar, E. D., Maneuski, D., O'Shea, V. and Mingard, K. P., 2014. Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20 (3), pp. 1024-1025.

Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R. and Allsopp, D.W.E., 2013. Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor. Sensors and Actuators A-Physical, 194, pp. 247-251.

Edwards, M. J., Le Boulbar, E. D., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C. R. and Allsopp, D. W. E., 2012. Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 960-963.

Hicks, M.-l., Tabeart, J., Edwards, M. J., Le Boulbar, E. D., Allsopp, D. W. E., Bowen, C. R. and Dent, A. C. E., 2012. High temperature measurement of elastic moduli of (0001) gallium nitride. Integrated Ferroelectrics, 133 (1), pp. 17-24.

Conference or Workshop Items

Le Boulbar, E. D. and Bowen, C. R., 2015. Study of Y-cut LiNbO3 (010) crystal under oscillated vibration at high temperature for energy harvesting in hostile environment. In: 2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF), and Piezoelectric Force Microscopy Workshop (PFM), 2015-05-24 - 2015-05-27, Singapore, Singapore.

This list was generated on Fri May 26 02:54:29 2017 IST.