Items by Le Boulbar, Emmanuel

Articles

Le Boulbar, E. D., Girgel, I., Lewins, C. J., Edwards, P. R., Martin, R. W., Šatka, A., Allsopp, D. W. E. and Shields, P. A., 2013. Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays. Journal of Applied Physics, 114 (9), 094302.

Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R. and Allsopp, D.W.E., 2013. Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor. Sensors and Actuators A-Physical, 194, pp. 247-251.

Edwards, M. J., Le Boulbar, E. D., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C. R. and Allsopp, D. W. E., 2012. Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 960-963.

Hicks, M.-l., Tabeart, J., Edwards, M. J., Le Boulbar, E. D., Allsopp, D. W. E., Bowen, C. R. and Dent, A. C. E., 2012. High temperature measurement of elastic moduli of (0001) gallium nitride. Integrated Ferroelectrics, 133 (1), pp. 17-24.