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Items by Wang, Wang

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Number of items: 41.

2013

Jiang, Q., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates. Semiconductor Science and Technology, 28 (9), 094010.

Jiang, Q., Lewins, C. J., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction. Japanese Journal of Applied Physics, 52 (8 PART2), 08JB24.

Jiang, Q., Lewins, C.J., Allsopp, D.W.E., Bowen, C.R., Wang, W.N., Satka, A., Priesol, J. and Uherek, F., 2013. Enhanced photoluminescence from InGaN/GaN quantum wells on a GaN/Si(111) template with extended three-dimensional GaN growth on low-temperature AIN interlayer. Japanese Journal of Applied Physics, 52 (6), 061002.

Lewins, C.J., Allsopp, D.W.E., Shields, P.A., Gao, X., Humphreys, B. and Wang, W.N., 2013. Light extracting properties of buried photonic quasi-crystal slabs in InGaN/GaN LEDs. IEEE/OSA Journal of Display Technology, 9 (5), pp. 333-338.

2012

Lethy, K.J., Edwards, P.R., Liu, C., Wang, W. N. and Martin, R.W., 2012. Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array. Journal of Applied Physics, 112 (2), 023507.

Shields, P. A., Charlton, M. D. B., Lewins, C. J., Gao, X., Allsopp, D. W. E., Wang, W. N. and Humphreys, B., 2012. Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures. Physica Status Solidi (A), 209 (3), pp. 451-455.

Shields, P., Hugues, M., Zúñiga-Pérez, J., Cooke, M., Dineen, M., Wang, W., Causa, F. and Allsopp, D., 2012. Fabrication and properties of etched GaN nanorods. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 631-634.

Jiang, Q., Edwards, M. J., Shields, P. A., Allsopp, D. W. E., Bowen, C. R., Wang, W. N., Tóth, L., Pécz, B., Srnanek, R., Satka, A. and Kovac, J., 2012. Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 650-653.

2011

Shields, P., Liu, C., Atka, A., Trampert, A., Zuniga-Perez, J., Alloing, B., Hako, D., Uherek, F., Wang, W., Causa, F. and Allsopp, D., 2011. Nanopendeo coalescence overgrowth of GaN on etched nanorod array. Physica Status Solidi (C) Current Topics in Solid State Physics, 8 (7-8), pp. 2334-2336.

Wang, W. N., Shields, P. A., Liu, C., Allsopp, D. W. E. and Causa, F., 2011. Advances in nano-enabled GaN photonic devices. Proceedings of SPIE - The International Society for Optical Engineering, 7945, 794523.

2010

Charlton, M. D. B., Shields, P. A., Allsopp, D. W. E. and Wang, W., 2010. High-efficiency photonic quasi-crystal light emitting diodes incorporating buried photonic crystal structures. Proceedings of SPIE - The International Society for Optical Engineering, 7784, 778407.

Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Campion, R. P., Foxon, C. T., Liu, C., Shields, P. and Wang, W., 2010. GaN devices based on nanorods. Journal of Physics: Conference Series, 209 (1), 012001.

Liu, C., Shields, P., Chen, Q., Allsopp, D., Wang, W. N., Bowen, C., Phan, T. l. and Cherns, D., 2010. Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 7 (1), pp. 32-35.

2009

Liu, C., Satka, A., Jagadamma, L. K., Edwards, P. R., Allsopp, D., Martin, R. W., Shields, P., Kovac, J., Uherek, F. and Wang, W. N., 2009. Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2 (12), 121002.

Shields, P. A., Liu, C., Nasir, M., Allsopp, D. W. E. and Wang, W. N., 2009. Enhanced light extraction in nitride light-emitting diodes by epitaxially grown photonic-crystal nanopyramid arrays. Applied Physics Letters, 95 (12), 123120.

Shields, P. A., Charlton, M. D. B., Lee, T., Zoorob, M. E., Allsopp, D. W. E. and Wang, W. N., 2009. Enhanced light extraction by photonic quasi-crystals in GaN blue LEDs. IEEE Journal of Selected Topics in Quantum Electronics, 15 (4), pp. 1269-1274.

Chen, Q., Hubbard, G., Shields, P. A., Liu, C., Allsopp, D. W. E., Wang, W. N. and Abbott, S., 2009. Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting. Applied Physics Letters, 94 (26), 263118.

Shields, P.A., Lis, S., Lee, T., Allsopp, D.W.E., Charlton, M.D.B., Zoorob, M.E. and Wang, W.N., 2009. Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. In: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, 2009-06-02 - 2009-06-03, Baltimore, M.D..

Hubbard, G., Abbott, S. J., Chen, Q., Allsopp, D. W. E., Wang, W. N., Bowen, C. R., Stevens, R., Satka, A., Hasko, D., Uherek, F. and Kovac, J., 2009. Wafer-scale transfer of nanoimprinted patterns into silicon substrates. Physica E-Low-Dimensional Systems & Nanostructures, 41 (6), pp. 1118-1121.

2008

Wang, W.-N., 2008. Production of single-crystal semiconductor material using a nanostructure template. C30B29/38-TW200839041 (A), 01 October 2008.

Wang, W.-N., 2008. GaN epitaxial layer over growth method. H01L21/20-GB2446471 (A), 13 August 2008.

Sytniewski, L. J., Lapkin, A. A., Stepanov, S. and Wang, W. N., 2008. CFD optimisation of up-flow vertical HVPE reactor for GaN growth. Journal of Crystal Growth, 310 (14), pp. 3358-3365.

Meshi, L., Cherns, D., Griffiths, I., Khongphetsak, S., Gott, A., Liu, C., Denchitcharoen, S., Shields, P., Wang, W. N., Campion, R., Novikov, S. and Foxon, T., 2008. The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. Physica Status Solidi (C) Current Topics in Solid State Physics, 5 (6), pp. 1645-1647.

Wang, W.-N., 2008. Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials. C30B25/18-TW200801257 (A), 01 January 2008.

Liu, C., Wang, W. N., Shields, P. A., Denchitcharoen, S., Causa, F. and Allsopp, D. E. W., 2008. Improvement of efficiency droop in resonanace tunneling LEDS. In: Ferguson, I. T., Taguchi, T., Ashdown, I. E. and Park, S. J., eds. 8th International Conference On Solid State Lighting. Vol. 7058. Spie-Int Soc Optical Engineering, D580-D580. (Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE))

Wang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., Khongphetsak, S., Griffiths, I., Cherns, D. and Campion, R., 2008. Nano-pendeo GaN growth of light emitting devices on silicon. Journal of Light and Visual Environment, 32 (2), pp. 187-190.

2007

Charlton, M. D. B., Lee, T., Zoorob, M. E., Shields, P. A. and Wang, W. N., 2007. Improving led extraction efficiency through surface patterning - art. no. 666914. In: Ferguson, I. T., Narendran, N., Taguchi, T. and Ashdown, I. E., eds. Seventh International Conference on Solid State Lighting. Vol. 6669. , p. 66914. (Proceedings of the Society of Photo-Optical Instrumentation Engineers (Spie))

Liu, C., Shields, P. A., Denchitcharoen, S., Stepanov, S., Gott, A. and Wang, W. N., 2007. Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 300 (1), pp. 104-109.

2006

May, P. W., Tsai, H. Y., Wang, W. N. and Smith, J. A., 2006. Deposition of CVD diamond onto GaN. Diamond and Related Materials, 15 (4-8), pp. 526-530.

Liu, C., Stepanov, S., Gott, A., Shields, P. A., Zhirnov, E., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. High temperature refractive indices of GaN. In: Hildebrandt, S. and Stutzmann, M., eds. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. Vol. 3. , pp. 1884-1887. (Physica Status Solidi C-Current Topics in Solid State Physics)

Liu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry. Applied Physics Letters, 88 (10).

Bowen, C., Allsopp, D., Stevens, R., Shields, P. and Wang, W., 2006. Modelling and designing GaN piezeoelectric MEMS,. In: Second International Conference on Multi-Material Micro Manufacture, 2006-01-01, Grenoble.

2005

Zhirnov, E., Stepanov, S., Gott, A., Wang, W. N., Shreter, Y. G., Tarkhin, D. V. and Bochkareva, N. I., 2005. ICP etching of III-nitride based laser structure with Cl-2-Ar plasma assisted by Si coverplate material. Journal of Vacuum Science & Technology A, 23 Jul-Aug (4), pp. 687-692.

2004

Yakovlev, E. V., Talalaev, R. A., Makarov, Y. N., Yavich, B. S. and Wang, W. N., 2004. Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor. Journal of Crystal Growth, 261 (2-3), pp. 182-189.

Zhirnov, E., Stepanov, S., Wang, W. N., Shreter, Y. G., Takhin, D. V. and Bochkareva, N. I., 2004. Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl-2/Ar plasma. Journal of Vacuum Science & Technology A, 22 Nov-Dec (6), pp. 2336-2341.

2003

Rajasingam, S., Sarua, A., Kuball, M., Cherodian, A., Miles, M. J., Younes, C. M., Yavich, B., Wang, W. N. and Grandjean, N., 2003. High-temperature annealing of AlGaN: Stress, structural, and compositional changes. Journal of Applied Physics, 94 (10), pp. 6366-6371.

Tseng, C. L., Youh, M. J., Moore, G. P., Hopkins, M. A., Stevens, R. and Wang, W. N., 2003. Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices. Applied Physics Letters, 83 (18), pp. 3677-3679.

2002

Sarua, A., Rajasingam, S., Kuball, M., Younes, C., Yavich, B. and Wang, W. N., 2002. High temperature annealing of AlGaN : Stress and composition changes. Physica Status Solidi (C)

Pi, X. D., Coleman, P. G., Tseng, C. L., Burrows, C. P., Yavich, B. and Wang, W. N., 2002. Defects in GaN films studied by positron annihilation spectroscopy. Journal of Physics-Condensed Matter, 14 (12), L243-L248.

2001

Stepanov, S., Wang, W. N., Yavich, B. S., Bougrov, V., Rebane, Y. T. and Shreter, Y. G., 2001. Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers. MRS Internet Journal of Nitride Semiconductor Research, 6 (6), pp. 1-8.

Oriato, D., Walker, A. B. and Wang, W. N., 2001. Simulation of widebandgap multi-quantum well light emitting diodes. Vlsi Design, 13 (1-4), pp. 295-299.

This list was generated on Wed Oct 22 16:43:26 2014 IST.