Research

Items by Coleman, Paul

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Number of items: 94.

Book Sections

Coleman, P. G., 2009. Positron Spectroscopy. In: Andrews, D. L., ed. Encyclopedia of Applied Spectroscopy. Chichester: Wiley-VCH, pp. 115-152.

Coleman, P. G., Pi, X. D., Gwilliam, R. M. and Sealy, B. J., 2004. Nanocrystalline Si studied by beam-based positron annihilation spectroscopy. In: Positron Annihilation - Icpa-13, Proceedings. Vol. 445-4. , pp. 66-68. (Materials Science Forum)

Coleman, P. G., 2004. Positron atomic physics and instrumentation: summary. In: Positron Annihilation - Icpa-13, Proceedings. Vol. 445-4. , pp. 527-530. (Materials Science Forum)

Knights, A. P. and Coleman, P. G., 2004. Sensitivity of positron annihilation spectroscopy to energy contamination in low energy boron ion implantation. In: Positron Annihilation - Icpa-13, Proceedings. Vol. 445-4. , pp. 123-125. (Materials Science Forum)

Tucker, C. E., Smith, F. A. and Coleman, P. G., 2001. A study of organo-metallic interfaces using DBAR. In: Positron Annihilation - Icpa-12. Vol. 363-3. , pp. 457-459. (Materials Science Forum)

Coleman, P., 2001. Positron depth profiling. In: Positron Annihilation - Icpa-12. Vol. 363-3. , pp. 420-424. (Materials Science Forum)

Articles

Townrow, S. and Coleman, P. G., 2014. Structure and sublimation of water ice films grown in vacuo at 120-190 K studied by positron and positronium annihilation. Journal of Physics: Condensed Matter, 26 (12), 125402.

Edwardson, C. J., Coleman, P. G. and El Mubarek, H. A. W., 2014. Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium. Semiconductor Science and Technology, 29 (3), 035005.

Romanenko, A., Edwardson, C. J., Coleman, P. G. and Simpson, P. J., 2013. The effect of vacancies on the microwave surface resistance of niobium revealed by positron annihilation spectroscopy. Applied Physics Letters, 102 (23), 232601.

Edwardson, C. J., Coleman, P. G., Paez, D. J., Doylend, J. K. and Knights, A. P., 2013. Direct observation of electron capture and reemission by the divacancy via charge transient positron spectroscopy. Physical Review Letters, 110 (13), 136401.

Coleman, P., 2013. Positronium formation in methanol and ethanol. Physical Review A - Atomic, Molecular, and Optical Physics, 87 (1), 012712.

Townrow, S., Coleman, P.G., Wu, Y.C., Jiang, J. and Wang, S.J., 2013. Observations of the growth and sublimation of water ice films by variable-energy positron annihilation spectroscopy. Journal of Physics: Conference Series, 443 (1), 012058.

Archer, J., Trilov, S.M. and Coleman, P.G., 2013. Positronium formation in molecular oxygen. Journal of Physics: Conference Series, 443 (1), 012001.

Coleman, P. G., Edwardson, C. J., Zhang, A., Ma, X., Pi, X. and Yang, D., 2012. Defects in TiO 2 films on p +-Si studied by positron annihilation spectroscopy. Materials Science & Engineering B - Solid State Materials for Advanced Technology, 177 (8), pp. 625-628.

Coleman, P. G., Edwardson, C. J., Knights, A. P. and Gwilliam, R. M., 2012. Vacancy-type defects created by single-shot and chain ion implantation of silicon. New Journal of Physics, 14, 025007.

Edwardson, C. J., Coleman, P. G., El Mubarek, H. A. W. and Gandy, A. S., 2012. Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe. Journal of Applied Physics, 111 (7), 073510.

Wu, Y. C., Zhai, T. and Coleman, P. G., 2012. A positron annihilation study of corrosion of aluminum and aluminum alloy by NaOH. Metallurgical and Materials Transactions A, 43 (8), pp. 2823-2831.

Edwardson, C. J., Coleman, P. G., Li, T. T. A., Cuevas, A. and Ruffell, S., 2012. Positron annihilation studies of the AlO xSiO 2Si interface in solar cell structures. Journal of Applied Physics, 111 (5), 053515.

Wu, Y. C., Jiang, J., Wang, S. J., Kallis, A. and Coleman, P. G., 2011. Porosity and crystallization of water ice films studied by positron and positronium annihilation. Physical Review B, 84 (6), 064123.

Thornton, M. J. and Coleman, P. G., 2011. Energy dependence of the positronium formation cross-section in argon. Journal of Physics B: Atomic Molecular and Optical Physics, 44 (14), 145201.

Coleman, P. G., Nash, D., Edwardson, C. J., Knights, A. P. and Gwilliam, R. M., 2011. The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy. Journal of Applied Physics, 110 (1), 016104.

Coleman, P. G., 2011. Activation energies for vacancy migration, clustering and annealing in silicon. Journal of Physics: Conference Series, 265 (1), 012001.

Wu, Y. C., Li, P. H., Xue, X. D., Wang, S. J., Kallis, A., Coleman, P. G. and Zhai, T., 2011. Corrosion of pure aluminium and aluminium alloy: A comparative study using a slow positron beam. Journal of Physics: Conference Series, 262 (1), 012065.

Coleman, P. G. and Kallis, A., 2011. Development of a spin-polarised positron beam. Journal of Physics: Conference Series, 262 (1), 012016.

Coleman, P. G., 2011. Ice and atoms: Experiments with laboratory-based positron beams. Journal of Physics: Conference Series, 262 (1), 012015.

Edwardson, C. J., Grogan, M. D. W., Birks, T. A. and Coleman, P. G., 2011. Positron and positronium studies of silica aerogel. Journal of Physics: Conference Series, 262 (1), 012018.

Knights, A. P., Bradley, J. D. B., Hulko, O., Stevanovic, D. V., Edwards, C. J., Kallis, A., Coleman, P. G., Crowe, I. F., Halsall, M. P. and Gwilliam, R. M., 2011. Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy. Journal of Physics: Conference Series, 262 (1), 012031.

Wu, Y. C., Kallis, A., Jiang, J. and Coleman, P. G., 2010. Structural and phase changes in amorphous solid water films revealed by positron beam spectroscopy. Physical Review Letters, 105 (6), 066103.

Jay, P. M. and Coleman, P. G., 2010. Coupling between positronium formation and elastic positron-scattering channels in the rare gases. Physical Review A - Atomic, Molecular, and Optical Physics, 82 (1), 012701.

Zhang, Y., Ma, X., Chen, P., Li, D., Pi, X., Yang, D. and Coleman, P. G., 2009. Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]. Applied Physics Letters, 95 (25), 252102.

Smith, A. J., Gwilliam, R. M., Stolojan, V., Knights, A. P., Coleman, P. G., Kallis, A. and Yeong, S. H., 2009. Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. Journal of Applied Physics, 106 (10), 103514.

Coleman, P. G., Cheesman, N. and Lowry, E. R., 2009. Coupling between positron-atom scattering channels above the first inelastic threshold. Physical Review Letters, 102 (17), 173201.

Coleman, P. and POTTER, N., 2008. Back to the future: Polarised positron beams. Applied Surface Science, 255 (1), pp. 101-103.

Coleman, P. and Abdulmalik, D., 2008. Useful vacancies: Positron beam interrogation of fluorine-vacancy complexes in semiconductor device structures. Applied Surface Science, 255 (1), pp. 71-74.

Knights, A., Dudeck, K., Walters, W. and Coleman, P., 2008. Modification of silicon waveguide structures using ion implantation induced defects. Applied Surface Science, 255 (1), pp. 75-77.

Abdulmalik, D. and Coleman, P. G., 2008. Activation energies for the formation and evaporation of vacancy clusters in silicon. Physical Review Letters, 100 (9), 095503.

Dudeck, K. J., Walters, W. D., Knights, A. P. and Coleman, P., 2008. Observation of vacancy defects at silicon grain boundaries formed via suppressed solid phase epitaxy. Journal of Physics D: Applied Physics, 41 (5), 055102.

Coleman, P., 2007. Defect profiles in semiconductor structures. physica status solidi c, 4 (10), pp. 3620-3626.

Potter, N. R. and Coleman, P., 2007. Internal surfaces of voids and cavities in silicon probed by Positron Annihilation Spectroscopy. Physica Status Solidi (C), 4 (10), pp. 3637-3641.

Coleman, P., Burrows, C. P., Mahapatra, R. and Wright, N. G., 2007. Positron spectroscopy of high-k dielectric films on SiC. physica status solidi c, 4 (10), pp. 3668-3671.

Abdulmalik, D. A., Coleman, P. G., El Mubarek, H. A. W. and Ashburn, P., 2007. Fluorine-vacancy complexes in Si-SiGe-Si structures. Journal of Applied Physics, 102 (1).

Foster, P. J., Mascher, P., Knights, A. P. and Coleman, P. G., 2007. Implantation profile of Na-22 continuous energy spectrum positrons in silicon. Journal of Applied Physics, 101 (4).

Abdulmalik, D. A. and Coleman, P., 2007. Investigation of electric fields in B-implanted Si by positron beam spectroscopy. Physica Status Solidi (C) Current Topics in Solid State Physics, 4 (10), pp. 3664-3667.

Mahapatra, R., Chakraborty, A. K., Poolamai, N., Horsfall, A., Chattopadhyay, S., Wright, N. G., Coleman, K. S., Coleman, P. G. and Burrows, C. P., 2007. Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. Journal of Vacuum Science & Technology B, 25 Jan-Feb (1), pp. 217-223.

Coleman, P. G. and Burrows, C. P., 2007. Monovacancy and interstitial migration in ion-implanted silicon. Physical Review Letters, 98 (26), p. 265502.

Grynszpan, R. I., Anwand, W., Brauer, G. and Coleman, P. G., 2007. Positron depth profiling in solid surface layers. Annales De Chimie-Science Des Materiaux, 32 Jul-Aug (4), pp. 365-382.

Coleman, P. G., Harding, R. E., Davies, G., Tan, J. and Wong-Leung, J., 2007. The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si. Journal of Materials Science-Materials in Electronics, 18 (7), pp. 695-700.

Abdulmalik, D. A., Coleman, P. G., Su, H. Z., Haddara, Y. M. and Knights, A. P., 2007. The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient. Journal of Materials Science-Materials in Electronics, 18 (7), pp. 753-757.

Coleman, P. G., Burrows, C. P., Mahapatra, R. and Wright, N. G., 2007. Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks. Journal of Applied Physics, 102 (1).

Zeng, S., Aliev, G. N., Wolverson, D., Davies, J., Bingham, S. J., Abdulmalik, D. A., Coleman, P., Wang, T. and Parbrook, P. J., 2006. The role of vacancies in the red luminescence from Mg-doped GaN. Physica Status Solidi (C), 3 (6), pp. 1919-1922.

Mason, R. E. and Coleman, P. G., 2006. A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. Applied Surface Science, 252 (9), pp. 3228-3230.

Brauer, G., Anwand, W., Eichhorn, F., Skorupa, W., Hofer, C., Teichert, C., Kuriplach, J., Cizek, J., Prochazka, I., Coleman, P. G., Nozawa, T. and Kohyama, A., 2006. Characterization of a SiC/SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies. Applied Surface Science, 252 (9), pp. 3342-3351.

Mahapatra, R., Poolamai, N., Chattopadhyay, S., Wright, N. G., Chakraborty, A. K., Coleman, K. S., Coleman, P. G. and Burrows, C. P., 2006. Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate. Applied Physics Letters, 88 (7).

Khaled, M. M., Yilbas, B. S., Al-Qaradawi, I. Y., Coleman, P. G., Abdulmalik, D., Seddigi, Z. S., Abulkibash, A., Abu-Sharkh, B. F. and Emad, M. M., 2006. Corrosion properties of duplex treated Ti-6Al-4V alloy in chloride media using electrochemical and positron annihilation spectroscopy techniques. Surface & Coatings Technology, 201 (3-4), pp. 932-937.

Abdulmalik, D. A., Coleman, P. G., Cowern, N. E. B., Smith, A. J., Sealy, B. J., Lerch, W., Paul, S. and Cristiano, F., 2006. Fluorine-vacancy complexes in ultrashallow B-implanted Si. Applied Physics Letters, 89 (5).

Harding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P. and Wong-Leung, J., 2006. Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. Journal of Applied Physics, 100 (7).

Foster, P. J., Doylend, J. K., Mascher, P., Knights, A. P. and Coleman, P. G., 2006. Optical attenuation in defect-engineered silicon rib waveguides. Journal of Applied Physics, 99 (7).

Zeng, S., Aliev, G. N., Wolverson, D., Davies, J. J., Bingham, S. J., Abdulmalik, D. A., Coleman, P. G., Wang, T. and Parbrook, P. J., 2006. Origin of the red luminescence in Mg-doped GaN. Applied Physics Letters, 89 (2).

Harding, R. E., Davies, G., Hayama, S., Coleman, P. G., Burrows, C. P. and Wong-Leung, J., 2006. Photoluminescence response of ion-implanted silicon. Applied Physics Letters, 89 (18).

Coleman, P. G., 2006. Positron beam studies of solids and surfaces: A summary. Applied Surface Science, 252 (9), pp. 3372-3374.

Coleman, P. G., Burrows, C. P. and Mason, R. E., 2006. Real-time full spectrum fitting of beam-based Doppler broadening data. Applied Surface Science, 252 (9), pp. 3183-3187.

Abdulmalik, D. A., Coleman, P. G. and Al-Qaradawi, I. Y., 2006. Self-implantation of Cz-Si: Clustering and annealing of defects. Applied Surface Science, 252 (9), pp. 3209-3214.

McGuire, S., Keeble, D. J., Mason, R. E., Coleman, P. G., Koutsonas, Y. and Jackson, T. J., 2006. Variable energy positron beam analysis of vacancy defects in laser ablated SrTiO3 thin films on SrTiO3. Journal of Applied Physics, 100 (4).

Coleman, P. G., Mason, R. E., Van Dyken, M. and Knights, A. P., 2005. Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon. Journal of Physics-Condensed Matter, 17 (22), S2323-S2330.

Shoukri, K. M., Haddara, Y. M., Knights, A. P. and Coleman, P. G., 2005. Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy. Applied Physics Letters, 86 (13).

Brauer, G., Anwand, W., Coleman, P. G. and Skorupa, W., 2005. Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC. Vacuum, 78 (2-4), pp. 131-136.

Pi, X. D., Coleman, P. G., Harding, R., Davies, G. and Gwilliam, R. M., 2004. Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide. Journal of Applied Physics, 95 (12), pp. 8155-8159.

Zhang, Q., Keeble, D. J., Coleman, P. G. and Mason, R., 2004. Fatigue properties of Mn-doped lead zirconate tianate thin films capacitors. Integrated Ferroelectrics, 62, pp. 119-125.

Pi, X. D., Burrows, C. P. and Coleman, P. G., 2003. Fluorine in silicon: Diffusion, trapping, and precipitation. Physical Review Letters, 90 (15).

Pi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M. and Sealy, B. J., 2003. Oxygen-related vacancy-type defects in ion-implanted silicon. Journal of Physics-Condensed Matter, 15 (39), S2825-S2833.

Coleman, P. G., Knights, A. P. and Anc, M. J., 2003. Positron annihilation spectroscopy as a diagnostic tool for process monitoring of buried oxide layer formation in Si. Journal of Applied Physics, 93 (1), pp. 698-701.

Pi, X. D., Coleman, P. G., Harding, R., Davies, G., Gwilliam, R. M. and Sealy, B. J., 2003. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2. Physica B Condensed Matter, 340, pp. 1094-1098.

Harding, R., Davies, G., Coleman, P. G., Burrows, C. P. and Wong-Leung, J., 2003. Study of defects in ion-implanted silicon using photoluminescence and positron annihilation. Physica B Condensed Matter, 340, pp. 738-742.

Coleman, P. G., Malik, F. and Knights, A. P., 2002. At-temperature annealing of near-surface vacancy-type defects observed by positronium formation spectroscopy. Journal of Physics-Condensed Matter, 14 (4), pp. 681-688.

Pi, X. D., Coleman, P. G., Tseng, C. L., Burrows, C. P., Yavich, B. and Wang, W. N., 2002. Defects in GaN films studied by positron annihilation spectroscopy. Journal of Physics-Condensed Matter, 14 (12), L243-L248.

Phelps, G. J., Wright, N. G., Chester, E. G., Johnson, C. M., O'Neill, A. G., Ortolland, S., Horsfall, A., Vassilevski, K., Gwilliam, R. M., Coleman, P. G. and Burrows, C. P., 2002. Enhanced nitrogen diffusion in 4H-SiC. Applied Physics Letters, 80 (2), pp. 228-230.

Pi, X. D., Burrows, C. P. and Coleman, P. G., 2002. Optimization of measurement parameters in Doppler broadening spectroscopy. Applied Surface Science, 194 (1-4), pp. 255-259.

Wotherspoon, A., Steeds, J. W., Coleman, P., Wolverson, D., Davies, J., Lawson, S. and Butler, J., 2002. Photoluminescence studies of type IIa and nitrogen doped CVD diamond. Diamond and Related Materials, 11 Mar-Jun (3-6), pp. 692-696.

Coleman, P. G., 2002. Positron beams: The journey from fundamental physics to industrial application. Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms, 192 (1-2), pp. 83-89.

Al-Qaradawi, I. Y. and Coleman, P. G., 2002. Re-emission of slow positrons from tungsten at elevated temperatures. Applied Surface Science, 194 (1-4), pp. 20-23.

Gwilliam, R. M., Knights, A. P., Burrows, C. P. and Coleman, P. G., 2002. Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si. Journal of Vacuum Science & Technology B, 20 Jan-Feb (1), pp. 427-430.

Coleman, P. G., Burrows, C. P. and Knights, A. P., 2002. Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon. Applied Physics Letters, 80 (6), pp. 947-949.

Coleman, P. G., 2002. Surface physics with slow positron beams. Applied Surface Science, 194 (1-4), pp. 264-270.

Al-Qaradawi, I. Y., Sellin, P. A. and Coleman, P. G., 2002. Tests of a diamond field-assisted positron moderator. Applied Surface Science, 194 (1-4), pp. 29-31.

Anwand, W., Brauer, G., Wirth, H., Skorupa, W. and Coleman, P. G., 2002. The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC. Applied Surface Science, 194 (1-4), pp. 127-130.

Jiraskova, Y., Brauer, G., Schneeweiss, O., Blawert, C., Anwand, W. and Coleman, P. G., 2002. The migration of defects and nitrogen atoms in nitrided surface layers of austenitic stainless steel followed by microscopic methods. Applied Surface Science, 194 (1-4), pp. 145-149.

Gwilliam, R. M., Knights, A. P., Wendler, E., Sealy, B. J., Burrows, C. P. and Coleman, P. G., 2001. Development of a novel tool for semiconductor process control. Materials Science & Engineering B - Solid State Materials for Advanced Technology, 80 (1-3), 60-+.

Knights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C. and Coleman, P. G., 2001. Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures. Journal of Applied Physics, 89 (1), pp. 76-79.

Tucker, C. E., Smith, F. A. and Coleman, P. G., 2001. Organo-metallic interfaces studied by positron annihilation spectroscopy. Journal of Physics-Condensed Matter, 13 (9), pp. 1857-1867.

Grynszpan, R. I. and Coleman, P. G., 2001. Positron re-emission from electro-deposited NiW. Measurement Science & Technology, 12 (2), pp. 163-166.

Gwilliam, R. M., Knights, A. P., Nejim, A., Sealy, B. J., Burrows, C. P., Malik, F. and Coleman, P. G., 2001. The study of lattice damage using slow positrons following low energy B+ implantation of silicon. Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms, 175, pp. 62-67.

Conference or Workshop Items

Coleman, P., Burrows, C. P., Knights, A. P., Sealy, B. J. and Gwilliam, R. M., 2002. Construction and performance of a bench-top mapping positron alpha tool. In: 14th International Conference on Ion Implantation Technology, 2002, 2002-09-22 - 2002-09-27.

Coleman, P., Burrows, C. P., Knights, A. P., Gwilliam, R. M., Sealy, B. J., Goldberg, R. D., Al-Bayati, A., Foad, M. and Murrell, A., 2000. A new tool for nondestructive monitoring of ion implantation. In: Conference on Ion Implantation Technology, 2000, 2000-09-22.

Ortolland, S., Wright, N., Johnson, C., Knights, A., Coleman, P., Burrows, C. and Pidduck, A., 2000. Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor. In: Silicon Carbine and Related Materials, ECSCRM2000, 2000-01-01.

This list was generated on Wed Apr 23 18:45:03 2014 IST.